ISSN : 1225-0112(Print)
ISSN : 2288-4505(Online)
ISSN : 2288-4505(Online)
Research Papers : 2-Naphthalenesulfonate and 2-Thiophenesulfonate Esters as Acid Amplifiers for 193 nm Photoresist
Abstract
1-hydroxy-4'-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 1-hydroxy-4'-2-thiophenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-thiophenesulfonyloxy isopropylidene dicyclohexane were synthesized and evaluated for their performance as novel acid amplifiers with a low absorption at 193 nm. These acid amplifiers showed reasonable thermal stability at the usual resist-processing temperature, 90 ℃ ~ 120 ℃. The sensitivity estimation showed enhanced sensitivity of poly(tert-butyl methacrylate) film was 2 ~ 3 times of poly(tert-butyl methacrylate) film with a photo-acid generator but in the absence of acid amplifiers.
연구논문 : 193 nm 포토레지스트용 산 증식제로 2-나프탈렌술폰산과 2-티오펜술폰산 에스테르에 관한 연구
초록
193 nm 영역에서 낮은 흡수도를 가지는 새로운 산 증식제로 1-hydroxy-4'-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-naphthalenesulfonyloxy isopropylidene dicyclohexane, 1-hydroxy-4'-2-thiophenesulfonyloxy isopropylidene dicyclohexane, 4,4'-Di-2-thiophenesulfonyloxy isopropylidene dicyclohexane를 합성하고 산 증식제로서의 성능을 평가하였다. 합성한 산 증식제는 보통의 레지스트 공정 온도 90 ℃ - 120 ℃의 범위에서 충분한 열적 안정성을 나타내었다. 또한 이러한 산 증식제를 사용한 경우에 광산 발생제만 사용한 poly(tert-butyl methacrylate)필름에 비교하여 2배에서 3배 정도의 감도 증진이 일어남을 확인하였다.