The demand for ultra-high-resolution organic light-emitting diodes (OLED) continues to rise, thereby driving extensive research into transfer processes aimed at overcoming the physical limitations of conventional deposition methods. As a process that transfers target materials from a transfer mold to a substrate, the transfer process requires the adhesion between the target material and the substrate to exceed the adhesion of the transfer mold for effective bonding. To achieve this, pressure is often applied during transfer; however, excessive pressure can potentially damage the device, making it essential to thoroughly analyze the adhesion between the target material and substrate under varying applied pressure. In this study, nanoscratch testing, capable of detailed quantitative nanoscale analysis, was employed to evaluate the adhesion and adhesion energy between the target material and substrate in OLED devices subjected to different pressures. As a result, the adhesion significantly increased under an applied pressure of 5 bar compared to conditions without applied pressure or with 1 bar of pressure, with no delamination occurring until the Si substrate fractured. The fracture loads varied among specimens without delamination, enabling a quantitative comparison of adhesion. These findings confirm that applying appropriate pressure during the transfer process can produce devices with superior adhesion compared to deposition methods.