When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at 250 cm-1and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to β-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182∼1.174 eV and optical gap energy was shown value of 3.4∼3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

현재 iron silicide막을 제작하고 있는 방법은 열처리를 수행함으로써 막의 계면 상태가 좋지 않으나 플라즈마를 이용하였을 때는 열처리를 수행하지 않으므로 양질의 막을 얻을 수 있다. 본 실험에서 제작된 막은 Raman 스펙트럼 250cm-1에서 나타난 Fe와 Si의 진동모드와 FT-IR에 의해 유기화